Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals

被引：0

作者：

Sueoka, K. ^{[1
]}

Kamiyama, E. ^{[1
]}

Vanhellemont, J. ^{[2
]}

机构：

[1] Okayama Prefectural Univ, Kuboki 111, Okayama 7191197, Japan

[2] Univ Ghent, Krijgslaan 281 S1, B-9000 Ghent, Belgium

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XV | 2014年 / 205-206卷

关键词：

Thermal stress; Point defects; Defect-free Si crystal; Density functional study; Void;

D O I：

10.4028/www.scientific.net/SSP.205-206.163

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For the development of the crystal pulling process for 450 mm-diameter defect-free Si crystals, the impact of thermal stress on intrinsic point defect behavior during crystal growth is studied using extensive density functional theory calculations. The impact of thermal stress on the so-called Voronkov criterion and on void formation is clarified and compared with published experimental results.

引用

页码：163 / +

页数：2

共 27 条

[21] Self-assembly of point defects into clusters and defect-free regions: a simulation study of higher-valent substituted ferroelectric perovskites
Zhang, R
Li, JF
Viehland, D
COMPUTATIONAL MATERIALS SCIENCE, 2004, 29 (01) : 67 - 75
[22] A density functional theory study of the effect of pressure on the formation and migration enthalpies of intrinsic point defects in growing Si single crystals
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[23] On the roles of bulk recombination of intrinsic point defects in Si and their interaction with the surface in the course of {113} defect growth:: a kinetic study by in situ HVEM irradiation
Fedina, LI
DEFECTS AND DIFFUSION IN SEMICONDUCTORS: ANNUAL RETROSPECTIVE V, 2002, 210-2 : 21 - 35
[24] Density Functional Theory Study of the Stress Impact on Formation Enthalpy of Intrinsic Point Defect around Dopant Atom in Ge Crystal
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[25] Density functional theory study on the impact of heavy doping on Si intrinsic point defect properties and implications for single crystal growth from a melt
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[26] Density functional theory study on the impact of heavy doping on Si intrinsic point defect properties and implications for single crystal growth from a melt
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JOURNAL OF APPLIED PHYSICS, 2013, 114 (15)
[27] Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-
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JOURNAL OF CRYSTAL GROWTH, 2017, 474 : 110 - 120

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