Evaluation of effectiveness of median of absolute deviations outlier rejection-based IDDQ testing for burn-in reduction
被引:22
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作者:
Sabade, SS
论文数: 0引用数: 0
h-index: 0
机构:
Texas A&M Univ, Dept Comp Sci, College Stn, TX 77843 USATexas A&M Univ, Dept Comp Sci, College Stn, TX 77843 USA
Sabade, SS
[1
]
Walker, DM
论文数: 0引用数: 0
h-index: 0
机构:
Texas A&M Univ, Dept Comp Sci, College Stn, TX 77843 USATexas A&M Univ, Dept Comp Sci, College Stn, TX 77843 USA
Walker, DM
[1
]
机构:
[1] Texas A&M Univ, Dept Comp Sci, College Stn, TX 77843 USA
来源:
20TH IEEE VLSI TEST SYMPOSIUM, PROCEEDINGS
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2002年
关键词:
D O I:
10.1109/VTS.2002.1011115
中图分类号:
TP3 [计算技术、计算机技术];
学科分类号:
0812 ;
摘要:
CMOS chips having high leakage are observed to have high burn-in fallout rate. I-DDQ testing has been considered as an alternative to burn-in. However, increased subthreshold leakage current in deep sub-micron technologies limits the use of I-DDQ testing in its present form. In this work, a statistical outlier rejection technique known as the median of absolute deviations (MAD) is evaluated as a means to screen early failures using I-DDQ data. MAD is compared with delta I-DDQ and current signature methods. The results of the analysis of the SEMATECH data are presented.