Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

被引：55

作者：

Johnson, Derek W. ^{[1
]}

Lee, Rinus T. P. ^{[2
]}

Hill, Richard J. W. ^{[2
]}

Wong, Man Hoi ^{[2
]}

Bersuker, Gennadi ^{[2
]}

Piner, Edwin L. ^{[3
]}

Kirsch, Paul D. ^{[2
]}

Harris, H. Rusty ^{[1
,4
]}

机构：

[1] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA

[2] SEMATECH, Albany, NY 12203 USA

[3] Texas State Univ, Dept Phys, San Marcos, TX 78666 USA

[4] Texas A&M Univ, Dept Phys, College Stn, TX 77843 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 10期

基金：

美国国家科学基金会;

关键词：

Au-free; GaN on Si; gate dielectric; power semiconductor devices; semiconductor-insulator interfaces;

D O I：

10.1109/TED.2013.2278677

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the investigation of the charge trapping characteristics of dielectric-gated AlGaN/GaN high electron mobility transistors (HEMTs) with atomic layer deposited HfO2 (Tetrakis-(ethylmethylamino)hafnium and H2O precursors). The impact of process development and tool contamination in an Au-free 200-mm silicon CMOS line is discussed. The interfacial GaOxNy layer is proposed to be the primary location of long time constant traps. We examine the impact of these trap states on threshold voltage engineering of the gate stack. Enhancement mode operation of HEMTs is demonstrated, and the stability of enhancement mode is discussed.

引用

页码：3197 / 3203

页数：7

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