Characterization of GaSb nanowires grown by MOVPE

被引：51

作者：

Jeppsson, Mattias ^{[1
]}

Dick, Kimberly A. ^{[1
]}

Nilsson, Henrik A. ^{[1
]}

Skold, Niklas ^{[1
]}

Wagner, Jakob B. ^{[1
]}

Caroff, Philippe ^{[1
]}

Wernersson, Lars-Erik ^{[1
]}

机构：

[1] Lund Univ, Dept Solid State Phys, S-22100 Lund, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 23期

关键词：

Nanowires; Metalorganic vapor phase epitaxy; Antimonides; Gallium compounds;

D O I：

10.1016/j.jcrysgro.2008.07.061

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：5119 / 5122

页数：4

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