Preferential nucleation and growth of InAs/GaAs(001) quantum dots on defected sites by droplet epitaxy

被引：4

作者：

Chen, Z. B. ^{[1
]}

Lei, W. ^{[2
]}

Chen, B. ^{[1
]}

Wang, Y. B. ^{[1
]}

Liao, X. Z. ^{[1
]}

Tan, H. H. ^{[3
]}

Zou, J. ^{[4
,5
]}

Ringer, S. P. ^{[1
,6
]}

Jagadish, C. ^{[3
]}

机构：

[1] Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia

[2] Univ Western Australia, Sch Elect Elect & Comp Engn, Perth, WA 6009, Australia

[3] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[4] Univ Queensland, Brisbane, Qld 4072, Australia

[5] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia

[6] Univ Sydney, Australian Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

来源：

SCRIPTA MATERIALIA | 2013年 / 69卷 / 08期

基金：

澳大利亚研究理事会;

关键词：

Quantum dots; Chemical vapour deposition; Droplet epitaxy; Electron microscopy; Crystalline defects; SHAPE; STACKING; ISLANDS;

D O I：

10.1016/j.scriptamat.2013.07.020

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A double-layer InAs/GaAs(00 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface nucleated and grew preferentially on top of the arms of the V-shaped defects. The mechanism behind the observed phenomenon was discussed. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：638 / 641

页数：4

共 30 条

[21] Microstructural evolution of Ge/Si(100) nanoscale islands [J].

Smith, DJ ;

Chandrasekhar, D ;

Chaparro, SA ;

Crozier, PA ;

Drucker, J ;

Floyd, M ;

McCartney, MR ;

Zhang, Y .

JOURNAL OF CRYSTAL GROWTH, 2003, 259 (03) :232-244

[22] Self-organized growth of three-dimensional quantum-dot crystals with fcc-like stacking and a tunable lattice constant [J].

Springholz, G ;

Holy, V ;

Pinczolits, M ;

Bauer, G .

SCIENCE, 1998, 282 (5389) :734-737

[23] Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector [J].

Stewart, K ;

Buda, M ;

Wong-Leung, J ;

Fu, L ;

Jagadish, C ;

Stiff-Roberts, A ;

Bhattacharya, P .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (08) :5283-5289

[24]

Stranski I.N., 1937, MONATSHEFTE CHEMIECH, V71, P351

[25] Self-organization in growth of quantum dot superlattices [J].

Tersoff, J ;

Teichert, C ;

Lagally, MG .

PHYSICAL REVIEW LETTERS, 1996, 76 (10) :1675-1678

[26] SHAPE TRANSITION IN GROWTH OF STRAINED ISLANDS - SPONTANEOUS FORMATION OF QUANTUM WIRES [J].

TERSOFF, J ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1993, 70 (18) :2782-2785

[27] In islands and their conversion to InAs quantum dots on GaAs (100): Structural and optical properties [J].

Urbanczyk, A. ;

Hamhuis, G. J. ;

Notzel, R. .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (01)

[28] VERTICALLY SELF-ORGANIZED INAS QUANTUM BOX ISLANDS ON GAAS(100) [J].

XIE, QH ;

MADHUKAR, A ;

CHEN, P ;

KOBAYASHI, NP .

PHYSICAL REVIEW LETTERS, 1995, 75 (13) :2542-2545

[29] Relaxed template for fabricating regularly distributed quantum dot arrays [J].

Xie, YH ;

Samavedam, SB ;

Bulsara, M ;

Langdo, TA ;

Fitzgerald, EA .

APPLIED PHYSICS LETTERS, 1997, 71 (24) :3567-3568

[30] The preferential formation site of dislocations in InAs/GaAs quantum dots [J].

Zhou, Shuai ;

Liu, Yumin ;

Wang, Donglin ;

Xin, Xia ;

Cao, Gui ;

Lu, Pengfei ;

Yu, Zhongyuan .

SUPERLATTICES AND MICROSTRUCTURES, 2012, 51 (01) :53-61

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