Preferential nucleation and growth of InAs/GaAs(001) quantum dots on defected sites by droplet epitaxy

被引：4

作者：

Chen, Z. B. ^{[1
]}

Lei, W. ^{[2
]}

Chen, B. ^{[1
]}

Wang, Y. B. ^{[1
]}

Liao, X. Z. ^{[1
]}

Tan, H. H. ^{[3
]}

Zou, J. ^{[4
,5
]}

Ringer, S. P. ^{[1
,6
]}

Jagadish, C. ^{[3
]}

机构：

[1] Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia

[2] Univ Western Australia, Sch Elect Elect & Comp Engn, Perth, WA 6009, Australia

[3] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[4] Univ Queensland, Brisbane, Qld 4072, Australia

[5] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia

[6] Univ Sydney, Australian Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

来源：

SCRIPTA MATERIALIA | 2013年 / 69卷 / 08期

基金：

澳大利亚研究理事会;

关键词：

Quantum dots; Chemical vapour deposition; Droplet epitaxy; Electron microscopy; Crystalline defects; SHAPE; STACKING; ISLANDS;

D O I：

10.1016/j.scriptamat.2013.07.020

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A double-layer InAs/GaAs(00 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface nucleated and grew preferentially on top of the arms of the V-shaped defects. The mechanism behind the observed phenomenon was discussed. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：638 / 641

页数：4

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