Enhanced Gas Sensing Properties of Liquid-Processed Semiconducting Tungsten Chalcogenide (WXi, X = O and S) Based Hybrid Nanomaterials

被引:27
作者
Jha, Ravindra Kumar [1 ]
Wan, Meher [2 ]
Jacob, Chacko [3 ]
Guha, Prasanta Kumar [4 ]
机构
[1] Indian Inst Technol Kharagpur, Sch Nano Sci & Technol, Kharagpur 721302, W Bengal, India
[2] Indian Inst Technol Kharagpur, Adv Technol Dev Ctr, Kharagpur 721302, W Bengal, India
[3] Indian Inst Technol Kharagpur, Mat Sci Ctr, Kharagpur 721302, W Bengal, India
[4] Indian Inst Technol Kharagpur, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India
关键词
Nanohybrids; tungsten chalcogenides; metal oxides; chemiresistive; ammonia sensors; AMMONIA SENSOR; ROOM-TEMPERATURE; HIGH-PERFORMANCE; GRAPHENE OXIDE; WS2; NH3; SENSITIVITY; FABRICATION; MOS2; NO;
D O I
10.1109/JSEN.2018.2810811
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A high temperature chemiresistive ammonia sensor based on nanohybrids of semiconducting tungsten chalcogenides i.e. tungsten oxides (WO3) and tungsten sulfides (WS2) is reported in this paper. The sensitivity of the devices was investigated over a wide range of concentration i.e. (250-2000 ppm) and temperature (25 degrees C-400 degrees C). The sensor with composition of WO3/WS2 (70: 30 wt.%) showed optimized performance when operated at 250 degrees C. The response of the sensor was found to be 1.5-12.6 times in the 250-2000 ppm range. The response and recovery times for 1000 ppm ammonia were found to be 160 s and 310 s, respectively. The sensor showed high selectivity towards ammonia over other volatile organic compounds, like ethanol, methanol, and acetone. The response from the sensor was found to be highly stable and reproducible over time. The plausible mechanism behind the excellent performance of the hybrid nanomaterial over the metal oxide based sensor suggests that the incorporation of transition metal dichalcogenides like WS2 could be beneficial for metal oxide based sensors in terms of lowering the operating temperature of sensing device, response enhancement, and improvement in the performance.
引用
收藏
页码:3494 / 3501
页数:8
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