Ambipolar, single-component, metal-organic thin-film transistors with high and balanced hole and electron mobilities

被引：30

作者：

Noro, Shin-ichiro ^{[1
]}

Takenobu, Taishi ^{[2
]}

Iwasa, Yoshihiro ^{[2
]}

Chang, Ho-Chol ^{[3
]}

Kitagawa, Susumu ^{[3
]}

Akutagawa, Tomoyuki ^{[1
]}

Nakamura, Takayoshi ^{[1
]}

机构：

[1] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0600812, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Kyoto Univ, Grad Sch Engn, Dept Synthet Chem & Biol Chem, Kyoto 6158510, Japan

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 18期

关键词：

D O I：

10.1002/adma.200800558

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High and balanced mobilities: Metal-organic thin-film transistors (MOTFTs) that employ metal complexes with narrow band gaps and less pi-conjugated structures are fabricated. These devices show high-performance ambipolar characteristics in comparison with other reported single-component ambipolar TFTs.

引用

页码：3399 / +

页数：6

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