Low Energy Magnetic Domain Wall Logic in Short, Narrow, Ferromagnetic Wires

被引：88

作者：

Currivan, Jean Anne ^{[1
,2
]}

Jang, Youngman ^{[2
]}

Mascaro, Mark D. ^{[2
]}

Baldo, Marc A. ^{[2
]}

Ross, Caroline A. ^{[2
]}

机构：

[1] Harvard Univ, Cambridge, MA 02138 USA

[2] MIT, Cambridge, MA 02139 USA

来源：

IEEE MAGNETICS LETTERS | 2012年 / 3卷

基金：

美国国家科学基金会;

关键词：

Spin electronics; magneto-electronics; domain wall; magnetic logic; TUNNEL-JUNCTIONS; MOTION; GATE;

D O I：

10.1109/LMAG.2012.2188621

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present circuit simulation results of an implementation of universal logic that operates at low switching energy. Information is stored in the position of a single domain wall in a thin, short ferromagnetic wire. The gate is switched by current-driven domain wall motion, and information is read out using a magnetic tunnel junction. The inputs and outputs of the device are currents controlled by voltage clocks, making it compatible with CMOS. Using devices that operate at 100-1 mV, we simulate a shift register circuit and a full-adder circuit. The simulations show that the magnetic logic gates can operate at lower switching energy than CMOS electronics.

引用

页数：4

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