Growth, etching morphology and spectra of LiAlO2 crystal

被引：3
|
作者：
Huang, Taohua [1 ,2 ]
Zhou, Shengming [1 ]
Teng, Hao [1 ,2 ]
Lin, Hui [1 ,2 ]
Wang, Jun [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2008年 / 43卷 / 08期
关键词：
gamma-LiAlO2; crystal; Czochralski method; etch pits; spectra;
D O I：
10.1002/crat.200711171
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
gamma-LiAlO2 single crystal was successfully grown by Czochralski method. The crystal quality was characterized by X-ray rocking curve and chemical etching. The effects of air-annealing and vapor transport equilibration (VTE) on the crystal quality, etch pits and absorption spectra of LiAlO2 were also investigated in detail. The results show that the as-grown crystal has very high quality with the full width at half maximum (FWHM) of 17.7-22.6 arcsec. Dislocation density in the middle part of the crystal is as low as about 3.0 x 10(3) cm(-2). The VTE-treated slice has larger FWHM value, etch pits density and absorption coefficient as compared with those of untreated and air-annealed slices, which indicates that the crystal quality became inferior after VTE treatment. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：801 / 805
页数：5
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