Composition, structure and optical properties of sputtered thin films of CuInSe2

被引：112

作者：

Müller, J ^{[1
]}

Nowoczin, J ^{[1
]}

Schmitt, H ^{[1
]}

机构：

[1] Univ Saarland, D-66123 Saarbrucken, Germany

来源：

THIN SOLID FILMS | 2006年 / 496卷 / 02期

关键词：

CuInSe2; sputtering; solar cells;

D O I：

10.1016/j.tsf.2005.09.077

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of copper indium selenide (CuInSe2) were produced by radio frequency (RF) sputtering due to the ability of this technique to achieve stoichiometric layers and its scalability to large-area devices. Results of energy dispersive analysis of X-rays (EDAX) revealed that the sputtered films were near to stoichiometry for substrate temperatures T-sub not exceeding 200 degrees C. X-ray diffraction (XRD) patterns indicate that the films exhibited some pattern similar to that of bulk crystals of tetragonal chalcopyrite, predominantly [ 112] oriented. Based on the XRD patterns, the lattice parameters and grain sizes were examined. The band gap E,, estimated from optical absorption data, was between 0.6-1.08 eV, depending on sputtering conditions such as substrate temperature and bias voltage. High optical absorption coefficients (> 10(4) cm(-1)) were found. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：364 / 370

页数：7

共 30 条

[1] Optical functions and electronic structure of CuInSe2, CuGaSe2, CuInS2, and CuGaS2 -: art. no. 075203 [J].