Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

被引：86

作者：

Gencarelli, F. ^{[1
,2
]}

Vincent, B. ^{[1
]}

Souriau, L. ^{[1
]}

Richard, O. ^{[1
]}

Vandervorst, W. ^{[1
,3
]}

Loo, R. ^{[1
]}

Caymax, M. ^{[1
]}

Heyns, M. ^{[1
,2
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, MTM, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, ESAT INSYS, B-3001 Louvain, Belgium

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 08期

基金：

日本学术振兴会;

关键词：

Digermane; Low temperature; Chemical Vapor Deposition; Germanium; Germanium tin; SI; EPITAXY; GROWTH;

D O I：

10.1016/j.tsf.2011.10.119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, digermane (Ge2H6) is investigated as low temperature Ge precursor for Chemical Vapor Deposition. High quality Ge epitaxial growth on Si substrates is reported at temperatures as low as 275 degrees C and a specific Ge2H6 surface reaction is proposed to explain the growth mechanism at those very low temperatures. In addition, we highlight that Ge2H6 provides solutions, not covered by conventional GeH4, for various original Ge-based materials: direct deposition of amorphous Ge layers directly on dielectric or metallic surfaces, as well as the epitaxial growth of smooth, fully strained, monocrystalline GeSn layers on Ge substrates. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：3211 / 3215

页数：5

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