GERMANIUM ALUMINUM NITRIDE THIN FILMS FOR PIEZO-MEMS DEVICES

被引：0

作者：

Mizuno, Takaaki ^{[1
]}

Umeda, K. ^{[1
]}

Aida, Y. ^{[1
]}

Honda, A. ^{[1
]}

Akiyama, M. ^{[2
]}

Nagase, T. ^{[2
]}

Kobayashi, M. ^{[1
]}

机构：

[1] Murata Mfg Co Ltd, Nagaokakyo, Kyoto, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tokyo, Japan

来源：

2017 19TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS) | 2017年

关键词：

Aluminum nitride; polarity inversion; bulk acoustic resonator; first-principle calculation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on piezoelectric polarity inversion of AlN thin films by doping. The germanium doped aluminum nitride (GeAlN) thin films are grown by RF magnetron sputtering. Doping amount is varied from 0 to 23%. The maximum piezoelectric polarity inversion from Al polarity to N polarity is observed at 3% of Ge where the piezoelectric d(33) value changes from + 7.8 to -7.7 pC/N. The bulk acoustic wave (BAW) resonator with the stack of both N polarity and Al polarity layers is demonstrated. The BAW resonator is excited at 2nd overtone mode at 2.58 GHz. Finally, the mechanism of polarity inversion of GeAlN is discussed and first-principal calculations of GeAlN system are presented.

引用

页码：1891 / 1894

页数：4

共 12 条

[1] Influence of oxygen concentration in sputtering gas on piezoelectric response of aluminum nitride thin films [J].