Kesterites - a challenging material for solar cells

被引：528

作者：

Siebentritt, Susanne ^{[1
]}

Schorr, Susan ^{[2
]}

机构：

[1] Univ Luxembourg, Lab Photovolta, Luxembourg, Luxembourg

[2] Helmholtz Zentrum Berlin Mat & Energie, Berlin, Germany

来源：

PROGRESS IN PHOTOVOLTAICS | 2012年 / 20卷 / 05期

关键词：

kesterite; CZTS; electronic structure; crystal structure; solar cell; defects; secondary phases; CU2ZNSNS4; THIN-FILMS; ELECTRON-PARAMAGNETIC-RESONANCE; OPTICAL-PROPERTIES; PHASE-EQUILIBRIA; RADIATIVE RECOMBINATION; INTRINSIC DEFECTS; STANNITE; SULFURIZATION; PHOTOLUMINESCENCE; FABRICATION;

D O I：

10.1002/pip.2156

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Kesterite materials (Cu2ZnSn(S,Se)4) are made from non-toxic, earth-abundant and low-cost raw materials. We summarise here the structural and electronic material data relevant for the solar cells. The equilibrium structure of both Cu2ZnSnS4 and Cu2ZnSnSe4 is the kesterite structure. However, the stannite structure has only a slightly lower binding energy. Because the band gap of the stannite is predicted to be about 100?meV lower than the kesterite band gap, any admixture of stannite will hurt the solar cells. The band gaps of Cu2ZnSnS4 and Cu2ZnSnSe4 are 1.5 and 1.0?eV, respectively. Hardly any experiments on defects are available. Theoretically, the CuZn antisite acceptor is predicted as the most probable defect. The existence region of the kesterite phase is smaller compared with that of chalcopyrites. This makes secondary phases a serious challenge in the development of solar cells. Copyright (c) 2012 John Wiley & Sons, Ltd.

引用

页码：512 / 519

页数：8

共 89 条

[1] Determination of band gap energy (Eg) of Cu2ZnSnSe4 thin films: On the discrepancies of reported band gap values [J].

Ahn, SeJin ;

Jung, Sunghun ;

Gwak, Jihye ;

Cho, Ara ;

Shin, Keeshik ;

Yoon, Kyunghoon ;

Park, Doyoung ;

Cheong, Hyonsik ;

Yun, Jae Ho .

APPLIED PHYSICS LETTERS, 2010, 97 (02)

[2] Optical functions of chalcopyrite CuGaxIn1-xSe2 alloys [J].

Alonso, MI ;

Garriga, M ;

Rincón, CAD ;

Hernández, E ;

León, M .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 74 (05) :659-664

[3] Cu2Zn1-xCdxSn(Se1-ySy)4 solid solutions as absorber materials for solar cells [J].

Altosaar, M. ;

Raudoja, J. ;

Timmo, K. ;

Danilson, M. ;

Grossberg, M. ;

Krustok, J. ;

Mellikov, E. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (01) :167-170

[4] Polymorphism in CuInS2 epilayers:: Origin of additional Raman modes [J].

Alvarez-García, J ;

Pérez-Rodríguez, A ;

Barcones, B ;

Romano-Rodríguez, A ;

Morante, JR ;

Janotti, A ;

Wei, SH ;

Scheer, R .

APPLIED PHYSICS LETTERS, 2002, 80 (04) :562-564

[5] Electronic structure and lattice dynamics in kesterite-type Cu2ZnSnSe4 from first-principles calculations [J].

Amiri, Narjes Beigom Mortazavi ;

Postnikov, Andrei .

PHYSICAL REVIEW B, 2010, 82 (20)

[6]

[Anonymous], 1922, The Analytical Expression of the Results of the Theory of Space-Groups

[7]

[Anonymous], 2011, 37 IEEE PHOT SPEC C

[8] Electron spin resonance studies of Cu(In,Ga)Se2 thin films [J].

Aubin, V ;

Binet, L ;

Guillemoles, JF .

THIN SOLID FILMS, 2003, 431 :167-171

[9] Effect of post-deposition annealing on the growth of Cu2ZnSnSe4 thin films for a solar cell absorber layer [J].

Babu, G. Suresh ;

Kumar, Y. B. Kishore ;

Bhaskar, P. Uday ;

Raja, V. Sundara .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (08) :085023

[10] Device characteristics of a 10.1% hydrazine-processed Cu2ZnSn(Se,S)4 solar cell [J].

Barkhouse, D. Aaron R. ;

Gunawan, Oki ;

Gokmen, Tayfun ;

Todorov, Teodor K. ;

Mitzi, David B. .

PROGRESS IN PHOTOVOLTAICS, 2012, 20 (01) :6-11

← 1 2 3 4 5 6 7 8 9 →