Growth and characterization of TbAs films

被引：9

作者：

Bomberger, Cory C. ^{[1
]}

Tew, Bo E. ^{[1
]}

Lewis, Matthew R. ^{[1
]}

Zide, Joshua M. O. ^{[1
]}

机构：

[1] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 20期

基金：

美国国家科学基金会;

关键词：

III-V; ERAS; SEMICONDUCTORS; (100)GAAS;

D O I：

10.1063/1.4967841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the molecular beam epitaxy growth and characterization of TbAs films. In situ reflection high energy electron diffraction and ex situ high resolution X-ray diffraction, reciprocal space mapping, and both scanning and transmission electron microscopy are used to confirm the complete film growth and study the films' morphology. Spectrophotometry measurements provide the energy of optical transitions, revealing a red shift in optical band gap with increasing thickness. The Hall effect measurements show temperature insensitive carrier concentrations, resistivities, and mobilities. The carrier concentration decreases and resistivity increases with increasing film thickness; mobility appears thickness independent. The films' reflectivity, obtained via Fourier transform infrared spectroscopy, shows a possible Drude edge that differs from the trend of other lanthanide monopnictides. These measurements show that TbAs is a degenerately doped semiconductor with a combination of electronic and optical properties that is dissimilar to other lanthanide monopnictides. Published by AIP Publishing.

引用

页数：4

共 30 条

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