Capillary-Force-Assisted Self-Assembly (CAS) of Highly Ordered and Anisotropic Graphene-Based Thin Films

被引:22
|
作者
Tkacz, Rachel [1 ,2 ]
Oldenbourg, Rudolf [3 ,4 ]
Fulcher, Alex [5 ]
Miansari, Morteza [1 ,2 ]
Majumder, Mainak [1 ,2 ]
机构
[1] Monash Univ, NSEL, Clayton, Vic 3800, Australia
[2] Monash Univ, Dept Mech & Aerosp Engn, Clayton, Vic 3800, Australia
[3] Marine Biol Lab, Woods Hole, MA 02543 USA
[4] Brown Univ, Dept Phys, Providence, RI 02912 USA
[5] Monash Univ, MMI, Clayton, Vic 3800, Australia
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2014年 / 118卷 / 01期
基金
澳大利亚研究理事会;
关键词
LIQUID-PHASE EXFOLIATION; GRAPHITE OXIDE; ELECTRICAL-PROPERTIES; TRANSPARENT; DISPERSIONS; FABRICATION; DEPOSITION; REDUCTION; SINGLE; SHEETS;
D O I
10.1021/jp4080114
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report capillary-force-assisted self-assembly (CAS) as a method for preparation of thin films of chemically reduced graphene oxide (rGO) with unidirectional organization of rGO sheets. The films were initiated at the contact line of the air-liquid-solid interface and form directly on solid substrates dipped in an isotropic colloidal suspension of rGO. Assisted by capillary forces at the contact line, the suspension undergoes an isotropic-to-anisotropic phase transition and becomes aligned with the film growth direction as the contact line moves across the substrate surface. We determined the degree of order in rGO films and assemblies by birefringence and diattenuation imaging. The slow axis of the rGO platelets within the CAS films displayed a narrow angular distribution (+/- 3 degrees) within a film area of 1 mm(2), resulting in the highest possible order parameter (S) of similar to 1 with 8-fold enhancement of electrical conductivity compared to films formed by traditional techniques such as filtration. Our straightforward film fabrication technique is scalable to produce large areas of films, and by controlling the rates of convective to diffusive mass transport, films with varying degree of order can be produced.
引用
收藏
页码:259 / 267
页数:9
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