Intrinsic Tolerance to Total Ionizing Dose Radiation in Gate-All-Around MOSFETs

被引：23

作者：

Comfort, Everett S. ^{[1
]}

Rodgers, Martin P. ^{[1
]}

Allen, William ^{[1
]}

Gausepohl, Steve C. ^{[1
]}

Zhang, Enxia X. ^{[2
]}

Alles, Michael L. ^{[2
]}

Hughes, Harold L. ^{[3
]}

McMarr, Patrick J. ^{[3
]}

Lee, Ji Ung ^{[1
]}

机构：

[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

[2] Vanderbilt Univ, Elect Engn & Comp Sci Dept, Nashville, TN 37235 USA

[3] US Naval Res Lab, Washington, DC 20375 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2013年 / 60卷 / 06期

关键词：

Gate-all-around; radiation effects; total ionizing dose; x-ray radiation; CHARGE;

D O I：

10.1109/TNS.2013.2280247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We measured the total ionizing dose response of gate-all-around silicon nanowire n- and pMOSFETs to x-ray doses up to 2Mrad(SiO2). We show that they are radiation hard, with no degradation in threshold voltage, off-state current, or subthreshold slope, even at the highest dose for a wide range of bias conditions. We attribute this to the intrinsically rad-hard feature of the gate-all-around device design, where the channel is no longer in contact with any insulating layers that could form a parasitic channel.

引用

页码：4483 / 4487

页数：5

共 20 条

[1] Total-ionizing-dose effects in modern CMOS technologies [J].

Barnaby, H. J. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) :3103-3121

[2] HOLE REMOVAL IN THIN-GATE MOSFETS BY TUNNELING [J].

BENEDETTO, JM ;

BOESCH, HE ;

MCLEAN, FB ;

MIZE, JP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :3916-3920

[3] A scaleable, radiation hardened shallow trench isolation [J].

Brady, FT ;

Maimon, JD ;

Hurt, MJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1999, 46 (06) :1836-1840

[4] Radiation dose effects in trigate SOI MOS transistors [J].

Colinge, J. P. ;

Orozco, A. ;

Rudee, J. ;

Xiong, Weize ;

Cleavelin, C. Rinn ;

Schulz, T. ;

Schruefer, K. ;

Knoblinger, G. ;

Patruno, P. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) :3237-3241

[5]

Colinge J. P., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P595, DOI 10.1109/IEDM.1990.237128

[6] EFFECTS OF TOTAL-DOSE IRRADIATION ON GATE-ALL-AROUND (GAA) DEVICES [J].

COLINGE, JP ;

TERAO, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (02) :78-82

[7] Radiation induced charge trapping in ultrathin HfO2-based MOSFETs [J].

Dixit, Sriram K. ;

Zhou, Xing J. ;

Schrimpf, Ronald D. ;

Fleetwood, Daniel M. ;

Pantelide, Sokrates T. ;

Choi, Rino ;

Bersuker, Gennadi ;

Feldman, Leonard C. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) :1883-1890

[8] Radiation Response of a Gate-All-Around Silicon Nano-Wire Transistor [J].

Draper, Bruce ;

Okandan, Murat ;

Shaneyfelt, Marty .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (06) :3274-3279

[9] Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs [J].

El Mamouni, Farah ;

Zhang, En Xia ;

Schrimpf, Ronald D. ;

Fleetwood, Daniel M. ;

Reed, Robert A. ;

Cristoloveanu, Sorin ;

Xiong, Weize .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (06) :3250-3255

[10] Radiation-induced edge effects in deep submicron CMOS transistors [J].

Faccio, F ;

Cervelli, G .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) :2413-2420

← 1 2 →