Quantitative dopant distributions in GaAs nanowires using atom probe tomography

被引：25

作者：

Du, Sichao ^{[1
]}

Burgess, Timothy ^{[2
]}

Gault, Baptiste ^{[3
,4
,5
]}

Gao, Qiang ^{[2
]}

Bao, Peite ^{[1
]}

Li, Li ^{[1
]}

Cui, Xiangyuan ^{[3
]}

KongYeoh, Wai ^{[3
]}

Liu, Hongwei ^{[3
]}

Yao, Lan ^{[3
]}

Ceguerra, Anna V. ^{[3
]}

Tan, Hark Hoe ^{[2
]}

Jagadish, Chennupati ^{[2
]}

Ringer, Simon P. ^{[3
,4
]}

Zheng, Rongkun ^{[1
,3
]}

机构：

[1] Univ Sydney, Sch Phys, Sydney, NSW 2006, Australia

[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[3] Univ Sydney, Australian Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

[4] Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia

[5] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L8, Canada

来源：

ULTRAMICROSCOPY | 2013年 / 132卷

基金：

澳大利亚研究理事会;

关键词：

Nanowires; Dopants; Atom probe tomography; III-V NANOWIRES; FIELD EVAPORATION; SEMICONDUCTOR NANOWIRES; SILICON NANOWIRES; MASS-SPECTRA; GROWTH; RECONSTRUCTION; SUPERLATTICES;

D O I：

10.1016/j.ultramic.2013.02.012

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Controllable doping of semiconductor nanowires is critical to realize their proposed applications, however precise and reliable characterization of dopant distributions remains challenging. In this article, we demonstrate an atomic-resolution three-dimensional elemental mapping of pristine semiconductor nanowires on growth substrates by using atom probe tomography to tackle this major challenge. This highly transferrable method is able to analyze the full diameter of a nanowire, with a depth resolution better than 0.17 nm thanks to an advanced reconstruction method exploiting the specimen's crystallography, and an enhanced chemical sensitivity of better than 8-fold increase in the signal-to-noise ratio. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：186 / 192

页数：7

共 38 条

[1] Characterizing Atomic Composition and Dopant Distribution in Wide Band Gap Semiconductor Nanowires Using Laser-Assisted Atom Probe Tomography [J].