Improvement in moisture durability of ZnO transparent conductive films with Ga heavy doping process

被引：16

作者：

Kishimoto, Yutaka ^{[1
]}

Nakagawara, Osamu ^{[1
]}

Seto, Hiroyuki ^{[1
]}

Koshido, Yoshihiro ^{[1
]}

Yoshino, Yukio ^{[1
]}

机构：

[1] Murata Mfg Co Ltd, Murmfg, Nagaokakyo, Kyoto 6178555, Japan

来源：

VACUUM | 2008年 / 83卷 / 03期

关键词：

ZnO; Transparent conductive films; Heavy doping process; Off-axis sputtering; Moisture resistance; Reliability; Crystal structure;

D O I：

10.1016/j.vacuum.2008.04.038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Moisture durability of ZnO transparent conductive films was achieved with Ga heavy doping by off-axis type rf magnetron sputtering. The resistivity of 10.9 at.% Ga-doped ZnO was 1.3 x 10(-3) Omega cm and changed less than 5% of resistivity over a 9400-h reliability test at a temperature of 85 degrees C and humidity of 85%. The crystal structural analysis of the heavily Ga-doped ZnO films indicated that the c-axis was oriented in various directions as well as the perpendicular direction to the substrate surface. The heavily doped Ga disorders the crystal growth of ZnO films and forms a different crystal structure from conventional ZnO. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：544 / 547

页数：4

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