Fabrication of Tm-doped Ta2O5 thin films using a co-sputtering method

被引：10

作者：

Miura, K. ^{[1
]}

Osawa, T. ^{[1
]}

Yokota, Y. ^{[1
]}

Suzuki, T. ^{[1
]}

Hanaizumi, O. ^{[1
]}

机构：

[1] Gunma Univ, Grad Sch Sci & Technol, 1-5-1 Tenjin Cho, Kiryu, Gunma 3768515, Japan

来源：

RESULTS IN PHYSICS | 2014年 / 4卷

基金：

日本学术振兴会;

关键词：

Tantalum oxide; Thulium; Sputtering; Annealing; Photoluminescence; INTENSE PHOTOLUMINESCENCE; LIGHT EMISSION; TANTALUM;

D O I：

10.1016/j.rinp.2014.08.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thulium-doped tantalum-oxide (Ta2O5:Tm) thin films were prepared using a simple co-sputtering method. A remarkable photoluminescence peak having a wavelength of around 800 nm due to Tm3+ was observed from a film annealed at 900 degrees C for 20 min. The delta-Ta2O5 (hexagonal) phase of the Ta2O5:Tm sputtered film is very important for obtaining strong photoluminescence. (C) 2014 The Authors. Published by Elsevier B. V.

引用

页码：148 / 149

页数：2