Fabrication of Tm-doped Ta2O5 thin films using a co-sputtering method

被引：10
作者：
Miura, K. [1 ]
Osawa, T. [1 ]
Yokota, Y. [1 ]
Suzuki, T. [1 ]
Hanaizumi, O. [1 ]
机构：
[1] Gunma Univ, Grad Sch Sci & Technol, 1-5-1 Tenjin Cho, Kiryu, Gunma 3768515, Japan
来源：
RESULTS IN PHYSICS | 2014年 / 4卷
基金：
日本学术振兴会;
关键词：
Tantalum oxide; Thulium; Sputtering; Annealing; Photoluminescence; INTENSE PHOTOLUMINESCENCE; LIGHT EMISSION; TANTALUM;
D O I：
10.1016/j.rinp.2014.08.011
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thulium-doped tantalum-oxide (Ta2O5:Tm) thin films were prepared using a simple co-sputtering method. A remarkable photoluminescence peak having a wavelength of around 800 nm due to Tm3+ was observed from a film annealed at 900 degrees C for 20 min. The delta-Ta2O5 (hexagonal) phase of the Ta2O5:Tm sputtered film is very important for obtaining strong photoluminescence. (C) 2014 The Authors. Published by Elsevier B. V.
引用
收藏
页码：148 / 149
页数：2
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