Phase transformation in Pb:GeSbTe chalcogenide films

被引：4
|
作者：
Kumar, J. [1 ]
Kumar, P. [1 ]
Ahmad, M. [1 ]
Chander, R. [1 ]
Thangaraj, R. [1 ]
Sathiaraj, T. S. [2 ]
机构：
[1] Guru Nanak Dev Univ, Dept Appl Phys, Semicond Lab, Amritsar 143005, Punjab, India
[2] Univ Botswana, Dept Phys, Gaborone, Botswana
来源：
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2008年 / 44卷 / 02期
关键词：
D O I：
10.1051/epjap:2008165
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A comprehensive analysis on the amorphous to crystalline phase transformation in Pb:GeSbTe chalcogenide alloy has been discussed. The structure identified with X-ray measurements has been discussed in relation to thermal analysis carried out on bulk samples. Optical constants have been calculated in the 350 to 800 nm wavelength range, using Fresnel's equation. The effect of Pb substitution on the optical contrast in terms of change in reflectivity and optical parameters (viz. refractive index, extinction coefficient) has been discussed. Marginal decrease in the optical contrast has been observed with a small increase in Pb content, which is effective to maintain the sufficient signal to noise ratio for optical phase-change storage.
引用
收藏
页码：117 / 123
页数：7
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