The impact of the surface treatments on the properties of GaN/3C-SiC/Si based Schottky Barrier Diodes

被引:1
作者
Han, Jisheng [1 ]
Tanner, Philip [1 ]
Dimitrijiev, Sima [2 ]
Shuang, Qu [3 ]
Shen, Yan [3 ]
Xu, Xiangang [3 ]
机构
[1] Griffith Univ, Queensland Micro & Nanotechnol Ctr, Nathan, Qld 4111, Australia
[2] Griffith Univ, Queensland Micro & Nanotechnol Ctr, Nathan, Qld 4111, Australia
[3] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
来源
SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷
关键词
Schottky Barrier Diode; GaN; 3C-SiC; Titanium; Nickel; Molybdenum; N-TYPE GAN;
D O I
10.4028/www.scientific.net/MSF.740-742.1111
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In this work, we studied the Ti, Mo, and Ni Schottky contacts on N-GaN/SiC/Si substrates. The effect of surface preparation and substrate temperature during sputter deposition of Schottky contacts have been investigated. For the Ti Schottky, the substrate temperature of 100 degrees C during the sputtering demonstrates the minimum series resistance with Rs about 0.04 Omega cm(2), while temperatures greater than 300 degrees C increased reverse bias leakage. The Mott-Schottky plot reveals a barrier height of 1.2V for this Ti Schottky contact. Results for sputtered Ni contacts using different substrate temperatures demonstrate the some reverse bias leakages. We characterized the I-V curves of the Ni contact to investigate the effect of the Ar sputter cleaning before contact deposition. It demonstrates the Ar sputtering increases the reverse bias leakage and forward current. The Mo Schottky contact obtained at 100 degrees C without Ar cleaning shows a promising reverse bias leakage current and a fair forward bias current.
引用
收藏
页码:1111 / +
页数:2
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