High-quality AlN films grown on chemical vapor-deposited graphene films

被引：0
|
作者：
Chen, Bin-Hao [1 ]
Hsu, Hsiu-Hao [2 ]
Lin, David T. W. [2 ]
机构：
[1] Far East Univ, Dept Mat & Energy Engn, 49 Chung Hua Rd, Tainan 744, Taiwan
[2] Natl Univ Tainan, Inst Mechatron Syst Engn, 33 Sec 2,Shu Lin St, Tainan 700, Taiwan
来源：
2016 3RD INTERNATIONAL CONFERENCE ON CHEMICAL AND BIOLOGICAL SCIENCES | 2016年 / 60卷
关键词：
THIN-FILMS; SPUTTERING PARAMETERS; CONTROLLABLE GROWTH; RESIDUAL-STRESS; LAYERS; CVD;
D O I：
10.1051/matecconf/20166001004
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.
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页数：4
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