Transparent conductive Ga-doped MgZnO/Ag/Ga-doped MgZnO sandwich structure with improved conductivity and transmittance

被引：27
作者：
Liu, Wei-Sheng [1 ]
Liu, Yueh-Hung [1 ]
Chen, Wei-Ku [1 ]
Hsueh, Kuang-Po [2 ]
机构：
[1] Yuan Ze Univ, Dept Photon Engn, Chungli, Taiwan
[2] Vanung Univ, Dept Elect Engn, Chungli, Taiwan
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2013年 / 564卷
关键词：
Sandwich structure; Sputtering; Thermal annealing; Transparent conducting oxide (TCO); X-ray diffraction; OPTICAL-PROPERTIES; THIN-FILMS; MGXZN1-XO FILMS; ZNO; ITO; DEPOSITION; COATINGS;
D O I：
10.1016/j.jallcom.2013.01.189
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
This study presents the advantages of combining Ga- doped MgZnO (GMZO) transparent conductive oxide (TCO) with a silver (Ag) layer to form a GMZO/Ag/GMZO composite structure using a radio- frequency magnetron sputtering and electron beam system. The proposed structure improves the electrical properties of a single GMZO bulk and allows a low processing temperature. This study also investigates the effects of the silver thickness and post-annealing process on the structural, electrical, and optical properties of the GMZO/Ag/GMZO composite sandwich structure. The optimal GMZO/Ag/GMZO structural thickness was 40/20/60 nm, which yielded a resistivity of 5.8 x 10 (5) Omega cm with an average transmittance of 81.0% at a wavelength range of 400- 800 nm. The figure of merit (phi(TC)) for the as- deposited sandwich structure was calculated as 2.1 x 10 (2) Omega (1). This is approximately two times higher than the best results obtained from a single GMZO bulk layer with an annealing temperature of 600 degrees C (1.1 x 10 (2) Omega (1)). This remarkable improvement of the GMZO/Ag/GMZO sandwich structure is a highly promising candidate for optoelectronic devices, and has a low processing temperature than a single TCO bulk layer. (C) 2013 Elsevier B. V. All rights reserved.
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页码：105 / 113
页数：9
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