Motional properties of positive muonium in gallium III-V compounds

被引：13
作者：
Lichti, RL [1 ]
Chow, KH
Hitti, B
Davis, EA
Sjue, SKL
Cox, SFJ
机构：
[1] Texas Tech Univ, Phys Dept, Lubbock, TX 79409 USA
[2] Univ Alberta, Dept Phys, Edmonton, AB T6G 2J1, Canada
[3] TRIUMF, Vancouver, BC V6T 2A3, Canada
[4] Univ Leicester, Dept Phys & Astron, Leicester LE1 7RH, Leics, England
[5] Rutherford Appleton Lab, ISIS Facil, Didcot OX11 0QX, Oxon, England
[6] UCL, Dept Phys & Astron, London WCE 6BT, England
来源：
PHYSICA B-CONDENSED MATTER | 2001年 / 308卷 / 308-310期
基金：
英国工程与自然科学研究理事会;
关键词：
muonium; hydrogen mobility; GaAs; GaP; GaSb;
D O I：
10.1016/S0921-4526(01)00918-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The motion of Mu(+) defect centers is investigated in heavily Zn-doped p-type GaAs, GaP, and GaSb using zero-field muon spin depolarization. Hop rates extracted from dynamic Kubo-Toyabe relaxation functions show activated motion above 200 K and changes in site or dynamics within 50 K of the onset. Barrier energies are extracted for the mobile centers. A second Mu(+) state at T-V sites is suggested by these results. Additional diamagnetic states are present implying interactions with Zn acceptors involving mobile states, Mu(T)(0) at low T and Mu(+) at high T. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：862 / 865
页数：4
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