A Transformer-based Injection-Locked Frequency Divider in 65-nm CMOS Technology

被引：0

作者：

Wan, Cao ^{[1
]}

Wu, Liang ^{[2
]}

Che, Wenquan ^{[1
]}

Xue, Quan ^{[1
]}

Feng, Linping ^{[1
]}

机构：

[1] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou, Peoples R China

[2] Chinese Univ Hong Kong, Sch Sci & Engn, Shenzhen, Peoples R China

来源：

PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2019年

关键词：

CMOS; divide-by-4; 5G; fourth-order resonator; harmonic boosting; injection lock; mm-Wave; transformer; DESIGN;

D O I：

10.1109/apmc46564.2019.9038520

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

A divide-by-four injection-locked frequency divider (ILFD) for 5G millimeter-wave communication system is presented in this paper. In this frequency divider, A transformer based fourth-order resonator is proposed to boost the third-order harmonic in the oscillator to increase the injection efficiency and thus the locking range. Besides, a buffer with harmonic rejection is adopted for the ILFD output harmonic suppression, resulting in a third-harmonic rejection ratio (HRR3) over 14.8dB. At 0 dBm power injection, a locking range of 30.16% from 24.5 GHz to 33.2 GHz is achieved for the proposed ILFD, with 9.7 mW power consumption under 0.6 V supply. The chip is implemented in 65nm CMOS process with die area of 0.448 mm(2).

引用

页码：402 / 404

页数：3

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