Quantitative wafer mapping of residual stress in electroplated NiFe films using independent strain and Young's modulus measurements

被引：0

作者：

Schiavone, G. ^{[1
]}

Desmulliez, M. P. Y. ^{[3
]}

Smith, S. ^{[1
]}

Murray, J. ^{[1
,2
]}

Sirotkin, E. ^{[1
]}

Terry, J. G. ^{[1
]}

Mount, A. R. ^{[2
]}

WaIton, A. J. ^{[1
]}

机构：

[1] Univ Edinburgh, Joint Res Inst Integrated Syst, Inst Integrated Micro & Nano Syst, Sch Engn,Scottish Microelect Ctr, Edinburgh EH9 3JF, Midlothian, Scotland

[2] Univ Edinburgh, Sch Chem, Edinburgh EH9 3JJ, Midlothian, Scotland

[3] Heriot Watt Univ, MIcroSyst Engn Ctr, Sch Engn & Phys Sci, Joint Res Inst Integrated Syst, Edinburgh EH14 4AS, Midlothian, Scotland

来源：

2012 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS) | 2012年

基金：

英国工程与自然科学研究理事会;

关键词：

THIN-FILMS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The uncontrolled development of stress within MEMS deposited and processed films can be detrimental for both device performance and reliability. This work focuses on combining the data from previously reported strain measurements obtained from mechanical test structures with new nano-indentation measurements of Young's modulus on both micromachined films and cantilevers. Both strain and Young's modulus data are then used to produce arguably the first quantitative wafer-level stress mapping of residual stress in micromachined materials. Results show significant local variation and possible correlation between Young's modulus and percentage of iron in the film. The measured values for the two test wafers, namely Young's modulus and residual stress, fall within the range of similar to 30 to similar to 180 GPa and similar to 50 to similar to 220 MPa, respectively. Young's modulus measurements on cantilevers show a consistent similar to 20% difference with respect to traditional indentation measurements, suggesting that this setup may help reduce or remove the influence of the substrate.

引用

页码：105 / 110

页数：6