Internal structure of multiphase zinc-blende wurtzite gallium nitride nanowires

被引:13
|
作者
Jacobs, B. W. [1 ]
Ayres, V. M. [1 ]
Crimp, M. A. [2 ]
McElroy, K. [1 ]
机构
[1] Michigan State Univ, Dept Elect & Comp Engn, E Lansing, MI 48824 USA
[2] Michigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA
基金
美国国家科学基金会;
关键词
D O I
10.1088/0957-4484/19/40/405706
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, the internal structure of novel multiphase gallium nitride nanowires in which multiple zinc-blende and wurtzite crystalline domains grow simultaneously along the entire length of the nanowire is investigated. Orientation relationships within the multiphase nanowires are identified using high-resolution transmission electron microscopy of nanowire cross-sections fabricated with a focused ion beam system. A coherent interface between the zinc-blende and wurtzite phases is identified. A mechanism for catalyst-free vapor-solid multiphase nanowire nucleation and growth is proposed.
引用
收藏
页数:6
相关论文
共 50 条
  • [1] Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs
    Jacobs, B. W.
    Ayres, V. M.
    Stallcup, R. E.
    Hartman, A.
    Tupta, M. A.
    Baczewski, A. D.
    Crimp, M. A.
    Halpern, J. B.
    He, M.
    Shaw, H. C.
    NANOTECHNOLOGY, 2007, 18 (47)
  • [2] Wurtzite to zinc-blende phase transition in gallium nitride thin films
    Kim, JH
    Holloway, PH
    APPLIED PHYSICS LETTERS, 2004, 84 (05) : 711 - 713
  • [3] Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride
    Siddiqua, Poppy
    O'Leary, Stephen K.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (05) : 3511 - 3567
  • [4] Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride
    Poppy Siddiqua
    Stephen K. O’Leary
    Journal of Materials Science: Materials in Electronics, 2018, 29 : 3511 - 3567
  • [5] Electronic structure of wurtzite and zinc-blende AlN
    P. Jonnard
    N. Capron
    F. Semond
    J. Massies
    E. Martinez-Guerrero
    H. Mariette
    The European Physical Journal B - Condensed Matter and Complex Systems, 2004, 42 : 351 - 359
  • [6] Electronic structure of wurtzite and zinc-blende AlN
    Jonnard, P
    Capron, N
    Semond, F
    Massies, J
    Martinez-Guerrero, E
    Mariette, H
    EUROPEAN PHYSICAL JOURNAL B, 2004, 42 (03): : 351 - 359
  • [7] Energy levels of nitride quantum dots: Wurtzite versus zinc-blende structure
    Bagga, A
    Chattopadhyay, PK
    Ghosh, S
    PHYSICAL REVIEW B, 2003, 68 (15)
  • [8] The stability and electronic properties of wurtzite and zinc-blende ZnS nanowires
    Chen, Hongxia
    Shi, Daning
    Qi, Jingshan
    Jia, Jianming
    Wang, Baolin
    PHYSICS LETTERS A, 2009, 373 (03) : 371 - 375
  • [9] Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
    Jahn, U.
    Laehnemann, J.
    Pfueller, C.
    Brandt, O.
    Breuer, S.
    Jenichen, B.
    Ramsteiner, M.
    Geelhaar, L.
    Riechert, H.
    PHYSICAL REVIEW B, 2012, 85 (04)
  • [10] Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires
    Jacopin, G.
    Rigutti, L.
    Largeau, L.
    Fortuna, F.
    Furtmayr, F.
    Julien, F. H.
    Eickhoff, M.
    Tchernycheva, M.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)