Ultra-high hole mobility exceeding one million in a strained germanium quantum well

被引：83

作者：

Dobbie, A. ^{[1
]}

Myronov, M. ^{[1
]}

Morris, R. J. H. ^{[1
]}

Hassan, A. H. A. ^{[1
]}

Prest, M. J. ^{[1
]}

Shah, V. A. ^{[1
]}

Parker, E. H. C. ^{[1
]}

Whall, T. E. ^{[1
]}

Leadley, D. R. ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 17期

基金：

欧盟第七框架计划; 英国工程与自然科学研究理事会;

关键词：

SCATTERING MECHANISMS; EFFECTIVE-MASS; GE CHANNEL; HETEROSTRUCTURES; CONDUCTIVITY; DEPENDENCE; GAS; SI;

D O I：

10.1063/1.4763476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report a Hall mobility of one million in a germanium two-dimensional hole gas. The extremely high hole mobility of 1.1 x 10(6) cm(2) V-1 s(-1) at a carrier sheet density of 3 x 10(11) cm(-2) was observed at 12K. This mobility is nearly an order of magnitude higher than any previously reported. From the structural analysis of the material and mobility modeling based on the relaxation time approximation, we attribute this result to the combination of a high purity Ge channel and a very low background impurity level that is achieved from the reduced-pressure chemical vapor deposition growth method. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4763476]

引用

页数：4

共 22 条

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Tanaka, T. ;

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Itoh, K. M. .

APPLIED PHYSICS LETTERS, 2012, 100 (22)

[22] High mobility SiGe hetero structures fabricated by low-energy plasma-enhanced chemical vapor deposition [J].

von Känel, H ;

Chrastina, D ;

Rössner, B ;

Isella, G ;

Hague, JP ;

Bollani, M .

MICROELECTRONIC ENGINEERING, 2004, 76 (1-4) :279-284

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