Fabrication of photonic crystals in rare-earth doped chalcogenide glass films for enhanced upconversion

被引：3

作者：

Pollard, M. E. ^{[1
]}

Knight, K. J. ^{[3
]}

Parker, G. J. ^{[1
]}

Hewak, D. W. ^{[2
]}

Charlton, M. D. B. ^{[1
]}

机构：

[1] Univ Southampton, Sch Elect & Comp Sci, Nano Res Grp, Southampton SO17 1BJ, Hants, England

[2] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

[3] Univ Adelaide, Sch Chem & Phys, Adelaide, SA 5005, Australia

来源：

OPTICAL COMPONENTS AND MATERIALS IX | 2012年 / 8257卷

基金：

英国工程与自然科学研究理事会;

关键词：

Photonic crystal; upconversion; rare earth; erbium; chalcogenide; gallium lanthanum sulfide; GLS; WAVE-GUIDE AMPLIFIERS; THIN-FILMS; OPTICAL-PROPERTIES; SPUTTERED FILMS; DEPOSITION; EMISSION;

D O I：

10.1117/12.908014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gallium lanthanum oxysulfide (GLSO) is a promising host material for observing strong upconversion emission from trivalent rare-earth ions such as erbium (Er3+). Its attractive properties include high rare-earth solubility due to the lanthanum content of the glass former, a high refractive index (n = 2.2 at 550nm) for high radiative efficiency, and a low maximum phonon energy of approximately 425cm(-1). Photonic crystals meanwhile can provide controlled light extraction, and may be capable of suppressing unwanted IR emission from lower lying metastable states. Here, we describe the fabrication of photonic crystals in annealed films of Er3+-doped GLSO deposited by RF sputtering. The most intense visible upconversion emission is observed in films annealed at 550 degrees C, close to the bulk glass transition temperature. Hexagonal lattice photonic crystals are subsequently milled into the films using a focused ion beam (FIB). The milling parameters are optimized to produce the most vertical sidewall profile.

引用

页数：10

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