Epitaxial growth and capacitance-voltage characteristics of BiFeO3/CeO2/yttria-stabilized zirconia/Si(001) heterostructure

被引：11
作者：
Hu, Zhongqiang [1 ,2 ]
Li, Meiya [1 ,2 ]
Zhu, Yongdan [1 ,2 ]
Pu, Shizhou [1 ,2 ]
Liu, Xiaolian [1 ,2 ]
Sebo, Bobby [1 ,2 ]
Zhao, Xingzhong [1 ,2 ]
Dong, Shuxiang [3 ]
机构：
[1] Wuhan Univ, Sch Phys & Technol, Minist Educ, Wuhan 430072, Peoples R China
[2] Wuhan Univ, Key Lab Artificial Micro Nano Struct, Minist Educ, Wuhan 430072, Peoples R China
[3] Peking Univ, Dept Mat Sci & Engn, Coll Engn, Beijing 100871, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 25期
基金：
中国国家自然科学基金;
关键词：
YTTRIA-STABILIZED ZIRCONIA; FIELD-EFFECT TRANSISTOR; LASER DEPOSITION; BUFFER LAYER; BIFEO3; FILMS; SI;
D O I：
10.1063/1.4730621
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the epitaxial growth of multiferroic BiFeO3 (BFO) film on Si(001) substrate by pulsed laser deposition using CeO2/yttria-stabilized zirconia (YSZ) as buffer layers. The epitaxial relationships of the films were BFO(001)/CeO2(001)/YSZ(001)/Si(001) for out-of-plane and [110]BFO parallel to[100]CeO2 parallel to[100]YSZ parallel to[100]Si for in-plane, respectively. Capacitance-voltage characteristics of a Pt/BFO/CeO2/YSZ/p-Si capacitor exhibited clockwise hysteresis loops with a large memory window of 2.5V at sweeping voltages of +/-16 V. Both the high and low capacitance values showed no obvious degradation after 10(4) s. The improved retention property was attributed to the use of high-k CeO2/YSZ insulating layers that effectively eliminated the charge trapping in the heterostructure. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4730621]
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页数：4
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