Analysis of breakdown in ferromagnetic tunnel junctions

被引:55
作者
Oepts, W
Verhagen, HJ
Coehoorn, R
de Jonge, WJM
机构
[1] Eindhoven Univ Technol, Dept Phys, NL-5600 MB Eindhoven, Netherlands
[2] Eindhoven Univ Technol, COBRA, NL-5600 MB Eindhoven, Netherlands
[3] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
关键词
D O I
10.1063/1.371300
中图分类号
O59 [应用物理学];
学科分类号
摘要
Due to their very thin tunnel barrier layer, magnetic tunnel junctions show dielectric breakdown at voltages of the order of 1 V. At the moment of breakdown, a highly conductive short is formed in the barrier and is visible as a hot spot. The breakdown effect is investigated by means of voltage ramp experiments on a series of nominally identical Co/Al2O3/Co tunnel junctions. The results are described in terms of a voltage dependent breakdown probability, and are further analyzed within the framework of a general model for the breakdown probability in dielectric materials, within which it is assumed that at any time the breakdown probability is independent of the (possibly time-dependent) voltage that has been previously applied. The experimental data can be described by several specific forms of the voltage breakdown probability function. A comparison with the models commonly used for describing thin film SiO2 breakdown is given, as well as suggestions for future experiments. (C) 1999 American Institute of Physics. [S0021-8979(99)05319-0].
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页码:3863 / 3872
页数:10
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