Voltage-Controlled Skyrmion Memristor for Energy-Efficient Synapse Applications

被引：51

作者：

Luo, Shijiang ^{[1
]}

Xu, Nuo ^{[2
]}

Guo, Zhe ^{[1
]}

Zhang, Yue ^{[1
]}

Hong, Jeongmin ^{[1
]}

You, Long ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Skyrmion; spintronics; memristor; synapse; multiferroic heterostructure; magnetic tunnel junction; SPIN REORIENTATION TRANSITION; MAGNETIC-ANISOTROPY; DYNAMICS; MEMORY; STRAIN;

D O I：

10.1109/LED.2019.2898275

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel voltage-controlled skyrmion memristor (VCSK-Memristor) based on a multiferroic heterostructure is proposed and studied. Under electric-field-modulated magnetic anisotropy via remnant strain, continuously tunable resistance is obtained in a VCSK-Memristor due to the skyrmion size modulation in the ferromagnetic layer. Geometrical scaling studies on VCSK-Memristor are performed to provide the guidelines for the design and optimization of this newly proposed spintronic device. The results indicate that the VCSK-Memristor is advantageous for fabricating energy-efficient synapse arrays for hardware neural-network applications.

引用

页码：635 / 638

页数：4

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