Numerical Modeling of GaAs Solar Cell Performances

被引：11
作者：
Abderrezek, M. [1 ,2 ]
Djahli, F. [2 ]
Fathi, M. [1 ]
Ayad, M. [1 ]
机构：
[1] Solar Equipments Dev Unit EPST CDER, UDES, Tipasa 42415, Algeria
[2] Ferhat Abbas Univ, Dept Elect, LIS Lab, Fac Technol, Setif, Algeria
来源：
ELEKTRONIKA IR ELEKTROTECHNIKA | 2013年 / 19卷 / 08期
关键词：
GaAs; solar cell; numerical modeling; PC1D; conversion efficiency;
D O I：
10.5755/j01.eee.19.8.5392
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The process of modeling photovoltaic devices is a tedious task in that it depends heavily on several intrinsic and extrinsic properties of the material. In this paper, numerical solutions are obtained using the Personal Computer 1 Dimension (PC1D) software package in order to improve solar cells performance. The analysis deals with high efficiency GaAs solar cells, in order to search the technological parameters leading to optimal performances of the cells, the effects of the doping level and the thicknesses of the base and emitter layers were also investigated. The optimal fill factor and the conversion efficiency that were obtained are 86.76 % and 25.8 % respectively.
引用
收藏
页码：41 / 44
页数：4
相关论文
共 12 条
  • [1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
    ADACHI, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29
  • [2] Adachi S., 1999, OPTICAL CONSTANTS CR, P220
  • [3] [Anonymous], 26 IEEE PHOT AN CA O
  • [4] Modeling solar cells with the dopant-diffused layers treated as conductive boundaries
    Brendel, Rolf
    [J]. PROGRESS IN PHOTOVOLTAICS, 2012, 20 (01): : 31 - 43
  • [5] Modeling thin-film PV devices
    Burgelman, M
    Verschraegen, J
    Degrave, S
    Nollet, P
    [J]. PROGRESS IN PHOTOVOLTAICS, 2004, 12 (2-3): : 143 - 153
  • [6] Ghannam MY, 2004, KUWAIT J SCI ENG, V31, P203
  • [7] GaAs/Ge solar cell AC parameters at different temperatures
    Kumar, RA
    Suresh, MS
    Nagaraju, J
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 77 (02) : 145 - 153
  • [8] Luque A., 2003, HDB PHOTOVOLTAIC SCI, P360, DOI DOI 10.1002/0470014008
  • [9] Numerical simulation of the effect of the Al molar fraction and thickness of an AlxGa1-xAs window on the sensitivity of a p+-n-n+ GaAs solar cell to 1 MeV electron irradiation
    Meftah, A. F.
    Sengouga, N.
    Meftah, A. M.
    Khelifi, S.
    [J]. RENEWABLE ENERGY, 2009, 34 (11) : 2426 - 2431
  • [10] Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers
    Singh, Khomdram Jolson
    Sarkar, Subir Kumar
    [J]. OPTICAL AND QUANTUM ELECTRONICS, 2012, 43 (1-5) : 1 - 21
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