Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes

被引：3
作者：
Polyakov, AY [1 ]
Smirnov, NB
Govorkov, AV
Kim, J
Ren, F
Thaler, GT
Frazier, RM
Gila, BP
Abernathy, CR
Pearton, SJ
Buyanova, IA
Rudko, GY
Chen, WM
Pan, CC
Chen, GT
Chyi, JI
Zavada, JM
机构：
[1] Inst Rare Met, Moscow 119017, Russia
[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[4] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[5] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan
[6] USA, Res Off, Res Triangle Pk, NC 27709 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2004年 / 33卷 / 03期
基金：
俄罗斯基础研究基金会; 美国国家科学基金会;
关键词：
GaN/InGaN; light-emitting diodes (LEDs); electroluminescence (EL);
D O I：
10.1007/s11664-004-0186-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called "spin-LEDs"). The contact annealing temperature was kept to 750degreesC, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of similar to15 V, with a lower EL signal compared to control LEDs without Mn. This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer.
引用
收藏
页码：241 / 247
页数：7
相关论文
共 26 条
[1]  
BERMAN LS, 1981, CAPACITANCE SPECTROS, P37
[2]   Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H-SiC(0001) by reactive molecular-beam epitaxy [J].
Dhar, S ;
Brandt, O ;
Trampert, A ;
Däweritz, L ;
Friedland, KJ ;
Ploog, KH ;
Keller, J ;
Beschoten, B ;
Güntherodt, G .
APPLIED PHYSICS LETTERS, 2003, 82 (13) :2077-2079
[3]   High temperature (>400 K) ferromagnetism, in III-V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy [J].
Hashimoto, M ;
Zhou, YK ;
Kanamura, M ;
Asahi, H .
SOLID STATE COMMUNICATIONS, 2002, 122 (1-2) :37-39
[4]   Quantifying electrical spin injection: Component-resolved electroluminescence from spin-polarized light-emitting diodes [J].
Jonker, BT ;
Hanbicki, AT ;
Park, YD ;
Itskos, G ;
Furis, M ;
Kioseoglou, G ;
Petrou, A ;
Wei, X .
APPLIED PHYSICS LETTERS, 2001, 79 (19) :3098-3100
[5]   Robust electrical spin injection into a semiconductor heterostructure [J].
Jonker, BT ;
Park, YD ;
Bennett, BR ;
Cheong, HD ;
Kioseoglou, G ;
Petrou, A .
PHYSICAL REVIEW B, 2000, 62 (12) :8180-8183
[6]   Magnetotransport of p-type GaMnN assisted by highly conductive precipitates [J].
Kim, KH ;
Lee, KJ ;
Kim, DJ ;
Kim, HJ ;
Ihm, YE ;
Djayaprawira, D ;
Takahashi, M ;
Kim, CS ;
Kim, CG ;
Yoo, SH .
APPLIED PHYSICS LETTERS, 2003, 82 (11) :1775-1777
[7]   Electrical spin injection in a ferromagnetic semiconductor heterostructure [J].
Ohno, Y ;
Young, DK ;
Beschoten, B ;
Matsukura, F ;
Ohno, H ;
Awschalom, DD .
NATURE, 1999, 402 (6763) :790-792
[8]   Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN [J].
Overberg, ME ;
Abernathy, CR ;
Pearton, SJ ;
Theodoropoulou, NA ;
McCarthy, KT ;
Hebard, AF .
APPLIED PHYSICS LETTERS, 2001, 79 (09) :1312-1314
[9]   Room-temperature ferromagnetism in Cr-doped GaN single crystals [J].
Park, SE ;
Lee, HJ ;
Cho, YC ;
Jeong, SY ;
Cho, CR ;
Cho, S .
APPLIED PHYSICS LETTERS, 2002, 80 (22) :4187-4189
[10]   Electrical spin injection across air-exposed epitaxially regrown semiconductor interfaces [J].
Park, YD ;
Jonker, BT ;
Bennett, BR ;
Itskos, G ;
Furis, M ;
Kioseoglou, G ;
Petrou, A .
APPLIED PHYSICS LETTERS, 2000, 77 (24) :3989-3991
123