Approaches to Decreasing the Processing Temperature for a Solution-Processed InZnO Thin-Film Transistors

In this paper, the formation of a dual active layer (DAL) and utilization of a nitrate precursor are proposed to decrease the processing temperature for solution-processed thin-film transistors (TFTs). In the DAL approach, the conductivity decline of a conventional solution-processed AlInZnO (AIZO) was complemented by stacking a highly conductive InZnO (IZO) layer at the bottom of the DAL structure. Further decrease in processing temperature was achieved for the IZO TFT with a zinc nitrate precursor, which showed a weaker decomposition behavior than Zn acetate. Using DAL and the nitrate precursor, TFTs with field-effect mobilities of 2.89 (fabricated at 350 degrees C) and 0.21 cm(2) V-1 s(-1) (fabricated at 250 degrees C) were achieved, respectively. (c) 2013 The Japan Society of Applied Physics