Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer

被引：10

作者：

Mikoushkin, V. M. ^{[1
]}

Bryzgalov, V. V. ^{[1
]}

Nikonov, S. Yu. ^{[1
]}

Solonitsyna, A. P. ^{[1
]}

Marchenko, D. E. ^{[2
,3
]}

机构：

[1] Ioffe Inst, St Petersburg 194021, Russia

[2] Tech Univ Dresden, D-01062 Dresden, Germany

[3] Helmholtz Zentrum BESSY II, German Russian Lab, D-12489 Berlin, Germany

来源：

SEMICONDUCTORS | 2018年 / 52卷 / 05期

基金：

俄罗斯科学基金会;

关键词：

RAY-PHOTOELECTRON-SPECTROSCOPY;

D O I：

10.1134/S1063782618050214

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Detailed information on GaAs oxide properties is important for solving the problem of passivating and dielectric layers in the GaAs-based electronics. The elemental and chemical compositions of the native oxide layer grown on the atomically clean surface of an n-GaAs (100) wafer etched by Ar+ ions have been studied by synchrotron-based photoelectron spectroscopy. It has been revealed that the oxide layer is essentially enriched in the Ga2O3 phase which is known to be a quite good dielectric as compared to As2O3. The gallium to arsenic ratio reaches the value as high as [Ga]/[As] = 1.5 in the course of oxidation. The Ga-enrichment occurs supposedly due to diffusion away of As released in preferential oxidation of Ga atoms. A band diagram was constructed for the native oxide nanolayer on the n-GaAs wafer. It has been shown that this natural nanostructure has features of a p-n heterojunction.

引用

页码：593 / 596

页数：4

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