Effects of rapid thermal annealing on interfacial and electrical properties of Gd-doped HfO2 high-k gate dielectrics

被引：22
作者：
Ma, Rui [1 ]
Liu, Mao [1 ,3 ]
He, Gang [2 ,3 ]
Fang, Ming [1 ]
Shang, Guoliang [1 ]
Zhang, Jiweng [2 ]
Chen, Xuefei [2 ]
Gao, Juan [2 ]
Fei, Guangtao [1 ]
Zhang, Lide [1 ]
机构：
[1] Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China
[2] Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
[3] Anhui Univ, Cooperat Innovat Res Ctr Weak Signal Detecting Ma, Hefei 230601, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 646卷
基金：
中国国家自然科学基金;
关键词：
Gd-doped HfO2 thin film; Rapid thermal annealing; Interfacial properties; Electrical properties; VAPOR-DEPOSITION; FILMS; OXIDES; SILICON; STACK;
D O I：
10.1016/j.jallcom.2015.06.039
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this work, we systematically investigated the effects of rapid thermal annealing on the interfacial and electrical properties, as well as band offsets of sputtering-derived Gd-doped HfO2 film on Si substrate. The results indicate that annealing temperature has little effect on the interfacial properties of Gd-doped HfO2 thin films, and the main component of interfacial layer is silicate without any silicide. Moreover, heat treatment can effectively improve the C-V characteristics of the samples, such as the increase of effective permittivity, reduction in Delta V-fb and no obvious frequency dispersion. However, the increase of annealing temperature leads to the increase of leakage current density of Al/Gd-doped HfO2/Si MOS capacitor due to the decrease of the conduction band offset (Delta Ec) and further crystallization of the samples. These investigation results might provide the guidance for the performance optimization of high k gated dielectrics to meet the requirements of future complementary-metal-oxide-semiconductor (CMOS) devices. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：310 / 314
页数：5
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