Nucleation of diamond films by ECR-enhanced microwave plasma chemical vapor deposition

被引：7
|
作者：
Sun, C
Zhang, WJ [1 ]
Lee, CS
Bello, I
Lee, ST
机构：
[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Tat Chee Ave, Kowloon, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Peoples R China
来源：
DIAMOND AND RELATED MATERIALS | 1999年 / 8卷 / 8-9期
关键词：
cyclotron resonance; diamond films; heteroepitaxy; nucleation;
D O I：
10.1016/S0925-9635(99)00011-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A novel nucleation technique based on electron cyclotron resonance microwave plasma was developed to enhance the nucleation of diamond. By choosing a suitable experimental condition, a nucleation density higher than 10(8) nuclei cm(-2) was achieved on an untreated, mirror-polished silicon substrate. Uniform diamond films were obtained by combining this nucleation method with subsequent growth by the common microwave plasma chemical vapor deposition. Furthermore, the possibility of this new nucleation method to generate heteroepitaxial diamond nuclei on (001) silicon substrates was explored. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：1410 / 1413
页数：4
相关论文
共 50 条
  • [1] Nucleation and growth dynamics of diamond films by microwave plasma-enhanced chemical vapor deposition (MPECVD)
    Ye, HT
    Sun, CQ
    Hing, P
    Xie, H
    Zhang, S
    Wei, J
    SURFACE & COATINGS TECHNOLOGY, 2000, 123 (2-3) : 129 - 133
  • [2] Lower gas pressure enhanced diamond nucleation on alumina by microwave plasma chemical vapor deposition
    Wang, ZM
    Xia, YB
    Yang, Y
    Fang, ZJ
    Wang, LJ
    Ju, JH
    Fan, YM
    Zhang, WL
    JOURNAL OF INORGANIC MATERIALS, 2002, 17 (04) : 765 - 770
  • [3] Biased enhanced growth of nanocrystalline diamond films by microwave plasma chemical vapor deposition
    Sharda, T
    Soga, T
    Jimbo, T
    Umeno, M
    DIAMOND AND RELATED MATERIALS, 2000, 9 (07) : 1331 - 1335
  • [4] Growth of nanocrystalline diamond films by biased enhanced microwave plasma chemical vapor deposition
    Sharda, T
    Soga, T
    Jimbo, T
    Umeno, M
    DIAMOND AND RELATED MATERIALS, 2001, 10 (9-10) : 1592 - 1596
  • [5] Nucleation and growth of diamond on titanium silicon carbide by microwave plasma-enhanced chemical vapor deposition
    Yang, Songlan
    yang, Qiaoqin
    Sun, Zhengming
    JOURNAL OF CRYSTAL GROWTH, 2006, 294 (02) : 452 - 458
  • [6] Growth of diamond films with bias during microwave plasma chemical vapor deposition
    Lu, CA
    Chang, L
    Huang, BR
    DIAMOND AND RELATED MATERIALS, 2002, 11 (3-6) : 523 - 526
  • [7] Positive-bias enhanced growth of high quality diamond films by microwave plasma chemical vapor deposition
    Saito, D.
    Isshiki, H.
    Kimura, T.
    DIAMOND AND RELATED MATERIALS, 2009, 18 (01) : 56 - 60
  • [8] Diamond films produced by microwave plasma chemical vapor deposition at low temperature and their characterization
    Wang, Lin
    Wang, Yongming
    Zhou, Han
    Ouyang, Shixi
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2008, 475 (1-2): : 17 - 19
  • [9] A novel microwave plasma reactor with a unique structure for chemical vapor deposition of diamond films
    Su, J. J.
    Li, Y. F.
    Li, X. L.
    Yao, P. L.
    Liu, Y. Q.
    Ding, M. H.
    Tang, W. Z.
    DIAMOND AND RELATED MATERIALS, 2014, 42 : 28 - 32
  • [10] Optimising control of microwave plasma bias enhanced nucleation for heteroepitaxial chemical vapour deposition diamond
    Marshall, RD
    Whitfield, MD
    Tracey, S
    Thompson, DJ
    Foord, JS
    Jackman, RB
    DIAMOND AND RELATED MATERIALS, 1997, 6 (5-7) : 676 - 680
12345