Ultrafast carrier dynamics in two-dimensional transition metal dichalcogenides

被引:64
作者
Li, Yuanzheng [1 ,2 ,3 ]
Shi, Jia [1 ,4 ]
Mi, Yang [1 ]
Sui, Xinyu [1 ,4 ]
Xu, Haiyang [2 ,3 ]
Liu, Xinfeng [1 ]
机构
[1] Natl Ctr Nanosci & Technol, CAS Key Lab Standardizat & Measurement Nanotechno, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China
[2] Northeast Normal Univ, Ctr Adv Optoelect Funct Mat Res, Minist Educ, Changchun 130024, Jilin, Peoples R China
[3] Northeast Normal Univ, Key Lab UV Emitting Mat & Technol, Minist Educ, Changchun 130024, Jilin, Peoples R China
[4] Univ Chinese Acad Sci, 19 A Yuquan Rd, Beijing 100049, Peoples R China
关键词
TIME-RESOLVED PHOTOLUMINESCENCE; CHEMICAL-VAPOR-DEPOSITION; AUGER RECOMBINATION; MONOLAYER MOS2; EPITAXIAL-GROWTH; LAYER MOS2; EXCITON DYNAMICS; QUANTUM DOTS; MONO LAYER; ENHANCEMENT;
D O I
10.1039/c8tc06343e
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An overall understanding of the carrier dynamics in two-dimensional transition metal dichalcogenides (TMDs) is necessary to improve the quantum efficiencies and performances of TMD-based optoelectronic devices. Many novel phenomena and interpretations of ultrafast carrier dynamics in TMD crystals have been reported in recent years; therefore, we have prepared this review for the existing reported experimental studies as a summary for researchers. This review briefly covers several typical topics involving ultrafast carrier dynamics in two-dimensional TMDs discussed so far, such as many-body effects, ultrafast nonradiative recombination, intervalley transfer of carriers, high-energy C exciton cooling, and carrier dynamics in TMD-based heterostructures. We have attempted to provide a relatively comprehensive presentation and positive guidance for studies involving carrier dynamics in two-dimensional TMDs.
引用
收藏
页码:4304 / 4319
页数:16
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