Ultrafast carrier dynamics in two-dimensional transition metal dichalcogenides

被引：72

作者：

Li, Yuanzheng ^{[1
,2
,3
]}

Shi, Jia ^{[1
,4
]}

Mi, Yang ^{[1
]}

Sui, Xinyu ^{[1
,4
]}

Xu, Haiyang ^{[2
,3
]}

Liu, Xinfeng ^{[1
]}

机构：

[1] Natl Ctr Nanosci & Technol, CAS Key Lab Standardizat & Measurement Nanotechno, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China

[2] Northeast Normal Univ, Ctr Adv Optoelect Funct Mat Res, Minist Educ, Changchun 130024, Jilin, Peoples R China

[3] Northeast Normal Univ, Key Lab UV Emitting Mat & Technol, Minist Educ, Changchun 130024, Jilin, Peoples R China

[4] Univ Chinese Acad Sci, 19 A Yuquan Rd, Beijing 100049, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2019年 / 7卷 / 15期

关键词：

TIME-RESOLVED PHOTOLUMINESCENCE; CHEMICAL-VAPOR-DEPOSITION; AUGER RECOMBINATION; MONOLAYER MOS2; EPITAXIAL-GROWTH; LAYER MOS2; EXCITON DYNAMICS; QUANTUM DOTS; MONO LAYER; ENHANCEMENT;

D O I：

10.1039/c8tc06343e

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An overall understanding of the carrier dynamics in two-dimensional transition metal dichalcogenides (TMDs) is necessary to improve the quantum efficiencies and performances of TMD-based optoelectronic devices. Many novel phenomena and interpretations of ultrafast carrier dynamics in TMD crystals have been reported in recent years; therefore, we have prepared this review for the existing reported experimental studies as a summary for researchers. This review briefly covers several typical topics involving ultrafast carrier dynamics in two-dimensional TMDs discussed so far, such as many-body effects, ultrafast nonradiative recombination, intervalley transfer of carriers, high-energy C exciton cooling, and carrier dynamics in TMD-based heterostructures. We have attempted to provide a relatively comprehensive presentation and positive guidance for studies involving carrier dynamics in two-dimensional TMDs.

引用

页码：4304 / 4319

页数：16

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