Enhanced leakage current performance and conduction mechanisms of Bi1.5Zn1.0Nb1.5O7/Ba0.5Sr0.5TiO3 bilayered thin films

被引：16
作者：
Li, Ruguan [1 ]
Jiang, Shuwen [1 ]
Gao, Libin [1 ]
Li, Yanrong [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 07期
基金：
中国国家自然科学基金;
关键词：
DEPENDENT DIELECTRIC-BREAKDOWN; CAPACITORS; INJECTION; (BA;
D O I：
10.1063/1.4757952
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Bi1.5Zn1.0Nb1.5O7 (BZN)/Ba0.5Sr0.5TiO3 (BST) bilayered films and BST thin films were prepared via radio frequency (RF) magnetron sputtering, and the leakage current behaviors of the films were investigated. Lower leakage currents of BZN/BST bilayered films were achieved compared with that of BST thin films, especially in the high field region. The potential barrier height of top contact is increased by insertion of a BZN layer in between BST and top Pt-electrodes, which might be responsible for the current reduction of BZN/BST under negative biases (positive voltage applied to bottom electrodes). For the case of positive biases, BZN/BST showed a significant increase in the threshold electric field of Poole-Frenkel emission compared with that of BST, resulting in a current decrease in BZN/BST than that in BST. For the BZN/BST bilayered films at 300 K, since the Schottky emission, Fowler-Nordheim tunneling and Poole-Frenkel emission occur in an extremely high electric field, the leakage current is governed by Ohmic conductivity behavior in a wide applied field of up to similar to 1 MV/cm. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757952]
引用
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页码：2012 / 10
页数：6
相关论文
共 23 条
[1]   Significant suppression of leakage current in (Ba,Sr)TiO3 thin films by Ni or Mn doping [J].
Ahn, KH ;
Baik, S ;
Kim, SS .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2651-2654
[2]   Electrical conduction mechanism in high-dielectric-constant (Ba0.5,Sr0.5)TiO3 thin films [J].
Chang, ST ;
Lee, JM .
APPLIED PHYSICS LETTERS, 2002, 80 (04) :655-657
[3]   Compensation doping of Ba0.7Sr0.3TiO3 thin films [J].
Copel, M ;
Baniecki, JD ;
Duncombe, PR ;
Kotecki, D ;
Laibowitz, R ;
Neumayer, DA ;
Shaw, TM .
APPLIED PHYSICS LETTERS, 1998, 73 (13) :1832-1834
[4]   Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories [J].
Dietz, GW ;
Schumacher, M ;
Waser, R ;
Streiffer, SK ;
Basceri, C ;
Kingon, AI .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2359-2364
[5]   Dielectric properties of Bi1.5Zn1.0Nb1.5O7/Mn-doped Ba0.6Sr0.4TiO3 heterolayered films grown by pulsed laser deposition [J].
Fu, Wangyang ;
Cao, Lingzhu ;
Wang, Shufang ;
Sun, Zhihui ;
Cheng, Bolin ;
Wang, Qian ;
Wang, Hong .
APPLIED PHYSICS LETTERS, 2006, 89 (13)
[6]   Bi1.5Zn1.0Nb1.5O7/Mn-doped Ba0.6Sr0.4TiO3 heterolayered thin films with enhanced tunable performance [J].
Fu, Wangyang ;
Wang, Hong ;
Cao, Lingzhu ;
Zhou, Yueliang .
APPLIED PHYSICS LETTERS, 2008, 92 (18)
[7]   Time dependent dielectric breakdown of paraelectric barium-strontium-titanate thin film capacitors for memory device applications [J].
Huang, SC ;
Chen, HM ;
Wu, SC ;
Lee, JYM .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) :5155-5157
[8]   Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and (Ba, Sr)TiO3 thin films [J].
Hwang, CS ;
Lee, BT ;
Kang, CS ;
Lee, KH ;
Cho, HJ ;
Hideki, H ;
Kim, WD ;
Lee, SI ;
Lee, MY .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) :287-295
[9]   A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes [J].
Hwang, CS ;
Lee, BT ;
Kang, CS ;
Kim, JW ;
Lee, KH ;
Cho, HJ ;
Horii, H ;
Kim, WD ;
Lee, SI ;
Roh, YB ;
Lee, MY .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) :3703-3713
[10]   Mn-doped Ba0.6Sr0.4TiO3 high-K gate dielectrics for low voltage organic transistor on polymer substrate -: art. no. 242908 [J].
Kang, KT ;
Lim, MH ;
Kim, HG ;
Choi, Y ;
Tuller, HL ;
Kim, ID ;
Hong, JM .
APPLIED PHYSICS LETTERS, 2005, 87 (24) :1-3
123