Origin of the large positive magnetoresistance of Ge1-xMnx granular thin films

被引:11
作者
Wakabayashi, Yuki K. [1 ]
Akiyama, Ryota [2 ]
Takeda, Yukiharu [3 ]
Horio, Masafumi [2 ]
Shibata, Goro [2 ]
Sakamoto, Shoya [2 ]
Ban, Yoshisuke [1 ]
Saitoh, Yuji [3 ]
Yamagami, Hiroshi [3 ,4 ]
Fujimori, Atsushi [2 ]
Tanaka, Masaaki [1 ,5 ]
Ohya, Shinobu [1 ,5 ]
机构
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
[2] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
[3] JAEA, Mat Sci Res Ctr, Sayo, Hyogo 6795148, Japan
[4] Kyoto Sangyo Univ, Dept Phys, Kita Ku, Kyoto 6038555, Japan
[5] Univ Tokyo, Grad Sch Engn, Ctr Spintron Res Network, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
基金
日本学术振兴会;
关键词
MAGNETIC CIRCULAR-DICHROISM; FERROMAGNETIC SEMICONDUCTOR; MNXGE1-X; SPECTRA;
D O I
10.1103/PhysRevB.95.014417
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ge1-xMnx (GeMn) granular thin films are a unique and promising material for spintronic applications owing to their large positive magnetoresistance (MR). Previous studies of GeMn have suggested that the large MR is related to the nanospinodal decomposition of GeMn into Mn-rich ferromagnetic nanoparticles and a Mn-poor paramagnetic matrix. However, the microscopic origin of the MR has not yet been clarified. Here, we develop a method to separately investigate the magnetic properties of the nanoparticles and the matrix, utilizing the extremely high sensitivity of x-ray magnetic circular dichroism (XMCD) to the local magnetic state of each atom. We find that the MR ratio is proportional to the product of the magnetizations originating from the nanoparticles and the matrix. This result indicates that the spin-polarized holes in the nanoparticles penetrate into the matrix and that these holes undergo first order magnetic scattering by the paramagnetic Mn atoms in the matrix, which induces the large MR.
引用
收藏
页数:6
相关论文
共 30 条
  • [1] Comparison of the magnetic properties of GeMn thin films through Mn L-edge x-ray absorption
    Ahlers, S.
    Stone, P. R.
    Sircar, N.
    Arenholz, E.
    Dubon, O. D.
    Bougeard, D.
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (15)
  • [2] Room-temperature thousandfold magnetoresistance change in MnSb granular films: Magnetoresistive switch effect
    Akinaga, H
    Mizuguchi, M
    Ono, K
    Oshima, M
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (03) : 357 - 359
  • [3] AKIYAMA R, UNPUB
  • [4] Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor -: art. no. 227203
    Csontos, M
    Wojtowicz, T
    Liu, X
    Dobrowolska, M
    Jankó, B
    Furdyna, JK
    Mihály, G
    [J]. PHYSICAL REVIEW LETTERS, 2005, 95 (22)
  • [5] Dalmas de Reotier P., 2015, PHYS REV B, V91
  • [6] Ferromagnetic moment and antiferromagnetic coupling in (Ga,Mn)As thin films
    Edmonds, KW
    Farley, NRS
    Johal, TK
    van der Laan, G
    Campion, RP
    Gallagher, BL
    Foxon, CT
    [J]. PHYSICAL REVIEW B, 2005, 71 (06):
  • [7] Surface characterization of MnxGe1-x and CryMnxGe1-x-y dilute magnetic semiconductors
    Gambardella, P.
    Claude, L.
    Rusponi, S.
    Franke, K. J.
    Brune, H.
    Raabe, J.
    Nolting, F.
    Bencok, P.
    Hanbicki, A. T.
    Jonker, B. T.
    Grazioli, C.
    Veronese, M.
    Carbone, C.
    [J]. PHYSICAL REVIEW B, 2007, 75 (12):
  • [8] Mn 2p-3d soft X-ray magnetic circular dichroism study of Mn5Ge3
    Hirai, C
    Sato, H
    Kimura, A
    Yaji, K
    Iori, K
    Taniguchi, M
    Hiraoka, K
    Muro, T
    Tanaka, A
    [J]. PHYSICA B-CONDENSED MATTER, 2004, 351 (3-4) : 341 - 343
  • [9] Spin-glass-like behavior of Ge: Mn
    Jaeger, C.
    Bihler, C.
    Vallaitis, T.
    Goennenwein, S. T. B.
    Opel, M.
    Gross, R.
    Brandt, M. S.
    [J]. PHYSICAL REVIEW B, 2006, 74 (04):
  • [10] Structure and magnetism of Ge3Mn5 clusters
    Jain, A.
    Jamet, M.
    Barski, A.
    Devillers, T.
    Yu, I. -S.
    Porret, C.
    Bayle-Guillemaud, P.
    Favre-Nicolin, V.
    Gambarelli, S.
    Maurel, V.
    Desfonds, G.
    Jacquot, J. F.
    Tardif, S.
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 109 (01)