High-Speed TSV Integration in an Active Silicon Photonics Interposer Platform

被引：0
|
作者：
Bogaerts, L. [1 ]
El-Mekki, Z. [1 ]
Van Huylenbroeck, S. [1 ]
Nolmans, P. [1 ]
Pantano, N. [1 ]
Sun, X. [1 ]
Rakowski, M. [1 ]
Velenis, D. [1 ]
Verheyen, P. [1 ]
Balakrishnan, S. [1 ]
De Heyn, P. [1 ]
Snyder, B. [1 ]
Ban, Y. [1 ]
Srinivasan, S. [1 ]
Lardenois, S. [1 ]
De Coster, J. [1 ]
Detalle, M. [1 ]
Absil, P. [1 ]
Miller, A. [1 ]
Pantouvaki, M. [1 ]
Van Campenhout, J. [1 ]
机构：
[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
来源：
2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2018年
关键词：
TSV; Silicon Photonics Interposer; BEOL;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The growing demand for I/O bandwidth in high-performance applications, such as datacenter switches and HPC nodes, drives the need for on-package integration of Optical I/O modules with the host CMOS ICs [1]. Silicon Photonics (SiPh) is a prime technology platform to realize multi-Tb/s hybrid CMOS-SiPh modules for 1m-500m+ optical interconnect distances [2]. Such Optical I/O modules require interfaces for dense, high-speed electrical I/O and low-noise power and ground delivery, which can be enabled by the integration of through-silicon vias (TSV) into the SiPh platform. Here, we describe challenges and results for 10 mu m x 100 mu m TSV-middle integration into a 300mm SiPh interposer platform. TSVs with low RF loss up to 50GHz are demonstrated along with low SiPh waveguide losses and high-performance Ge photodetectors.
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页数：3
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