Fast-turnaround plasma charging damage monitor: Method and application to a metal etch and resist strip process

被引：0
|
作者：
Werking, J
Bersuker, G
Chan, YD
机构：
来源：
1997 2ND INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE | 1997年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed a fast-turnaround method that uses antenna-transistor test structures to monitor plasma charging damage. This technique can be used to measure plasma exposure effects and latent charging damage. Results on metal etch and plasma resist strip tools demonstrate that this method can quantitatively differentiate charging damage levels between tools, and between different processes in the same tool.
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页码：197 / 200
页数：4
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