Phase assembly and photo-induced current in CdTe-ZnO nanocomposite thin films

被引：6

作者：

Beal, R. J. ^{[1
]}

Kana, J. B. Kana ^{[1
]}

Potter, B. G., Jr. ^{[1
,2
]}

机构：

[1] Univ Arizona, Dept Mat Sci & Engn, Tucson, AZ 85721 USA

[2] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 03期

基金：

美国国家科学基金会;

关键词：

MULTIPLE EXCITON GENERATION; SEMICONDUCTOR QUANTUM DOTS; SOLAR-CELLS; PHOTOVOLTAICS;

D O I：

10.1063/1.4736862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sequential radio-frequency sputtering was used to produce CdTe-ZnO nanocomposite thin films with varied semiconductor-phase extended structures. Control of the spatial distribution of CdTe nanoparticles within the ZnO embedding phase was used to influence the semiconductor phase connectivity, contributing to both changes in quantum confinement induced spectral absorption and carrier transport characteristics of the resulting nanocomposite. An increased number density of CdTe particles deposited along the applied field direction produced an enhancement in the photo-induced current observed. These results highlight the opportunity to employ long-range phase assembly as a means to control optoelectronic properties of significant interest for photovoltaic applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4736862]

引用

页数：5

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