Triple-gated Spindt-type FEA for image sensor with HARP target

被引：0
作者：
Honda, Y. [1 ]
Takiguchi, Y. [1 ]
Egami, N. [1 ]
Nanba, M. [2 ]
Nakamura, K. [3 ]
Taniguchi, M. [3 ]
机构：
[1] NHK Sci & Technol Res Labs, Setagaya Ku, 1-10-11 Kinuta, Tokyo 1578510, Japan
[2] NHK Engn Serv Inc, Setagaya Ku, Tokyo 1578540, Japan
[3] Futaba Corp, Chiba 2994395, Japan
来源：
2011 24TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2011年
关键词：
field emitter; FEA; electrostatic focusing; HARP;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new electrostatic focusing field emitter for FEA - HARP (field emitter array - high-gain avalanche rushing amorphous photoconductor) image sensor was designed. Simulation results showed that the new emitter can improve the emission current and suppress the electrons bombarding the insulator, a problem that degrades the reliability of the FEA.
引用
收藏
页码：11 / +
页数：2
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