Crack-free thick (∼5 μm) α-Ga2O3 films on sapphire substrates with α-(Al,Ga)2O3 buffer layers

被引：38

作者：

Oda, Masaya ^{[1
,2
]}

Kaneko, Kentaro ^{[2
]}

Fujita, Shizuo ^{[2
]}

Hitora, Toshimi ^{[1
]}

机构：

[1] FLOSFIA Inc, Kyodai Katsura Venture Plaza, Kyoto 6158245, Japan

[2] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158520, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 12期

关键词：

BETA-GA2O3; SINGLE-CRYSTALS; CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; OXIDE; GROWTH; ALPHA-AL2O3; GA2O3; EDGE;

D O I：

10.7567/JJAP.55.1202B4

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To obtain crack-free thick alpha-Ga2O3 films on sapphire substrates, effects and behaviors of buffer layers have been investigated. With the growth of an alpha-Ga2O3 layer, there appeared an unintentionally formed layer in the sample, which was associated with stress accumulation and could be the seed for crack generation. We obtained a thick (similar to 5 mu m) alpha-Ga2O3 layer on a sapphire substrate with the insertion of alpha-(Al0.12Ga0.88)(2)O-3/alpha-(Al0.02Ga0.98)(2)O-3 buffer layers, and for this sample, we did not observe the intermediate layer, suggesting that the buffer layers were effective for eliminating the stress accumulation at the alpha-Ga2O3/sapphire interface region. (C) 2016 The Japan Society of Applied Physics

引用

页数：5

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