Crack-free thick (∼5 μm) α-Ga2O3 films on sapphire substrates with α-(Al,Ga)2O3 buffer layers

被引：38

作者：

Oda, Masaya ^{[1
,2
]}

Kaneko, Kentaro ^{[2
]}

Fujita, Shizuo ^{[2
]}

Hitora, Toshimi ^{[1
]}

机构：

[1] FLOSFIA Inc, Kyodai Katsura Venture Plaza, Kyoto 6158245, Japan

[2] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158520, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 12期

关键词：

BETA-GA2O3; SINGLE-CRYSTALS; CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; OXIDE; GROWTH; ALPHA-AL2O3; GA2O3; EDGE;

D O I：

10.7567/JJAP.55.1202B4

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To obtain crack-free thick alpha-Ga2O3 films on sapphire substrates, effects and behaviors of buffer layers have been investigated. With the growth of an alpha-Ga2O3 layer, there appeared an unintentionally formed layer in the sample, which was associated with stress accumulation and could be the seed for crack generation. We obtained a thick (similar to 5 mu m) alpha-Ga2O3 layer on a sapphire substrate with the insertion of alpha-(Al0.12Ga0.88)(2)O-3/alpha-(Al0.02Ga0.98)(2)O-3 buffer layers, and for this sample, we did not observe the intermediate layer, suggesting that the buffer layers were effective for eliminating the stress accumulation at the alpha-Ga2O3/sapphire interface region. (C) 2016 The Japan Society of Applied Physics

引用

页数：5

共 40 条

[1] Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method [J].

Aida, Hideo ;

Nishiguchi, Kengo ;

Takeda, Hidetoshi ;

Aota, Natsuko ;

Sunakawa, Kazuhiko ;

Yaguchi, Yoichi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (11) :8506-8509

[2]

Akaiwa K., 2016, THESIS

[3] Electrical Conductive Corundum-Structured α-Ga2O3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition [J].

Akaiwa, Kazuaki ;

Fujita, Shizuo .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (07)

[4] Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN [J].

Amano, Hiroshi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (05)

[5]

[Anonymous], 73 ANN DEV RES C DRC

[6] Mist-CVD Grown Sn-Doped α-Ga2O3 MESFETs [J].

Dang, Giang T. ;

Kawaharamura, Toshiyuki ;

Furuta, Mamoru ;

Allen, Martin W. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (11) :3640-3644

[7] BETA-GA203 OXIDE - FORCE-FIELD, THERMAL DILATATION AND ANISOTROPIC RIGIDITY [J].

DOHY, D ;

GAVARRI, JR .

JOURNAL OF SOLID STATE CHEMISTRY, 1983, 49 (01) :107-117

[8] THERMAL-EXPANSION OF ALPHA GA2O3 [J].

ECKERT, LJ ;

BRADT, RC .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1973, 56 (04) :229-230

[9] Wide-bandgap semiconductor materials: For their full bloom [J].

Fujita, Shizuo .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (03)

[10] Czochralski growth and characterization of β-Ga2O3 single crystals [J].

Galazka, Z. ;

Uecker, R. ;

Irmscher, K. ;

Albrecht, M. ;

Klimm, D. ;

Pietsch, M. ;

Bruetzam, M. ;

Bertram, R. ;

Ganschow, S. ;

Fornari, R. .

CRYSTAL RESEARCH AND TECHNOLOGY, 2010, 45 (12) :1229-1236

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