Direct Observation of Nano-Sized Defects in Thin Films Formed by Sputter Deposition

被引：0
|
作者：
Jeong, Eun-Wook [1 ]
Kwan, Se-Hun [2 ]
Cho, Kyung-Mox [1 ]
Kim, Kwang Ho [1 ]
Choe, Youngson [3 ]
Cho, Young-Rae [1 ]
机构：
[1] Pusan Natl Univ, Dept Mat Sci & Engn, Pusan 609735, South Korea
[2] Pusan Natl Univ, Natl Core Res Ctr Hybrid Mat Solut, Pusan 609735, South Korea
[3] Pusan Natl Univ, Dept Chem Engn, Pusan 609735, South Korea
来源：
2012 12TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2012年
基金：
新加坡国家研究基金会;
关键词：
Barrier layer; Nano-sized defect; Thin films; Observation technology; Element mapping; LIGHT-EMITTING DEVICES; GRAIN-BOUNDARIES; PENETRATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The nano-sized defects in the barrier layer are considered as major pathway of water vapor. In this paper, Cr thin film was coated on the polyethylene terephthalate (PET) substrate. By application of atomic layer deposition (ALD) with an Al2O3 on the Cr thin film having nano-sized defects, a direct image of the nanosized defects was observed by using CMP process and conductive AFM. The resolution of nano-sized defects in this study was about 30 nm. This newly developed observation technology applied by damascene process could be very usefully applied to the direct observation of defects in the coating layers fabricated by various deposition methods.
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页数：3
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